Izinto Zokushisa ze-Silicon Carbide: Ukuhlukaniswa Kwesimo kanye Namakhono Okwenza Ngokwezifiso

Izinto zokushisa ze-silicon carbide (SiC)zibalulekile ekusetshenzisweni kwezimboni ezishisa kakhulu, ezibaluleke kakhulu ngenxa yokuzinza okuhle kakhulu kokushisa, ukusebenza kahle kwamandla, kanye nokuphila isikhathi eside kwenkonzo. Ukuma kwazo kuthinta ngqo ukuhambisana nemiklamo yesithando kanye nezidingo zokushisa. Ngaphandle kwamaphrofayili ajwayelekile, ukwenza ngokwezifiso okwenziwe ngokwezifiso kuqinisekisa ukuhlanganiswa okungenamthungo kumasethingi ezimboni akhethekile. Lesi sihloko sichaza ukucushwa okubalulekile kanye namakhono okwenza ngokwezifiso aguquguqukayo ukukusiza ukhethe ikhambi lokushisa lokushisa eliphezulu elifanele.

Izimo Eziyinhloko Zezinto Zokushisa Ze-Silicon Carbide
Izinto zokushisa ze-SiC zenziwa ngezimo eziningi ezijwayelekile, ngasinye senzelwe izimo zokusebenza ezizinikele:
1. Izinduku ze-SiC Ezinentambo:Uhlobo olusetshenziswa kakhulu, oluneziphetho ezinezintambo zokufakwa okuphephile. Umklamo oqondile oqondile uletha ukusatshalaliswa kokushisa okufanayo, okulungele ama-tunnel kiln, ama-roller kiln, kanye nama-heat treatment furnaces. Ububanzi obujwayelekile: 12–60 mm, ubude obungasetshenziswa bufika ku-1800 mm, izinga lokushisa lokusebenza eliphakeme lingu-1625℃.
2. Izinto ze-SiC Ezinomumo Ofana No-U:Igobekile ku-U-configuration ukuze wonge isikhala sokufaka futhi uthuthukise ukusebenza kahle kwemisebe. Ivame ukufakwa ngokuqondile ezitsheni zamabhokisi, ezitsheni zokufudumala, nasezitsheni zelebhu. Irediyasi egobile: 50–200 mm, evumelana nobukhulu obuhlukahlukene bangaphakathi begumbi.
3. Izinto ze-SiC Ezinomumo Ofana No-W:Iqukethe iphrofayili ye-W enama-triple-bend, enikeza indawo yokushisa enkulu yokushisa okusheshayo kanye nokushisa okukhulu. Isetshenziswa kuma-oven amakhulu okuhlanganisa ama-oven okuncibilikisa ingilazi kanye nama-oven okushisa e-ceramic. Ubude obuphelele bufika ku-3000 mm ukuze kube nokushisa okuhambisanayo kwegumbi.
4. Izinduku ze-SiC zohlobo lwesibhamu:Yakhelwe ngephrofayili emise okwesibhamu kanye nesigaba esishisayo esandisiwe sokushisa okugxilile endaweni, njengokwelashwa kokushisa okuyingxenye kwezingxenye zensimbi kanye nokushisa okuqondile ezithandweni ezincane. Inciphisa ukulahleka kokushisa, ngokushisa okuphezulu kokusebenza okungu-1600℃.
5. Izinto ze-SiC zohlobo lomnyango:Yakhiwe ngesakhiwo sohlaka lomnyango, inikeza izindawo ezibanzi nezilinganayo zokushisa. Ifaneleka kahle izitofu zamadrowa nezitofu zomgodi, ngokufakwa okulula ngaphandle kwezinto eziyinkimbinkimbi, esetshenziswa kabanzi ekushiseni izingxenye ze-elekthronikhi ngenqwaba.
6. Izinduku ze-SiC ezine-Angle Yesokudla:Yakhiwe ngokugoba okungu-90° kwezindawo ezivalekile kanye nezakhiwo zokufaka ezine-engeli, njengezindawo ezinamaphrofayili kanye nezindawo zamakhona ezithandweni ezincane zokuhlola. Ukushiswa okuhlanganisiwe kuqinisekisa ukuzinza kwesakhiwo, ngobubanzi obujwayelekile obungu-10–40 mm.
7. Izinduku ze-SiC Eziqinile:Ifakwe iziphetho ezibandayo ezikhulisiwe ezinokumelana okuphansi kanye nokushabalalisa ukushisa okuthuthukisiwe, ivikela ama-terminal kagesi ekulimaleni okushisa ngokweqile. Ilungele ama-kiln ashisa kakhulu ahlala isikhathi eside kufaka phakathi ama-kiln e-ceramic roller kanye nama-innealing furnaces engilazi, anempilo yesevisi engaphezu kuka-20% kunezinhlobo ezijwayelekile.
8. Izinduku ze-SiC ezinobubanzi obufanayo:Ububanzi obuhambisanayo obuhambisanayo kulo lonke ubude, okunikeza ukushisa okuzinzile okugcwele. Kukhethwa ukusetshenziswa okunembile okuhlanganisa ukushisa kwelebhu kanye nezitofu zokwenziwa kwezinto ze-semiconductor. Ukubekezelelana kobubanzi kulawulwa ku-±0.2 mm ukuze kube nokufana okuphezulu.